Compact optoelectronic oscillators using WGM modes on fused silica and MgF2 mini-disks resonators
Identifieur interne : 004575 ( Main/Repository ); précédent : 004574; suivant : 004576Compact optoelectronic oscillators using WGM modes on fused silica and MgF2 mini-disks resonators
Auteurs : RBID : Pascal:11-0007528Descripteurs français
- Pascal (Inist)
- Mode galerie, Modulation optique, Modulation phase, Bruit phase, Résonateur cavité, Guide onde optique, Photodiode, Amplificateur optique, Modulateur optique, Ligne retard, Hyperfréquence, Fibre optique, Magnésium Fluorure, Composé ternaire, Gallium Arséniure, Indium Arséniure, Microoptique, Silice fusionnée, F Mg, As Ga In, MgF2, InGaAs, 0130C, 4279G, 4260D, 4279H, 4279, Oscillateur optique.
English descriptors
- KwdEn :
- Cavity resonators, Delay lines, Gallium Arsenides, Indium Arsenides, Magnesium Fluorides, Micro-optics, Microwave radiation, Optical amplifier, Optical fibers, Optical modulation, Optical modulators, Optical oscillators, Optical waveguides, Phase modulation, Phase noise, Photodiodes, Ternary compounds, Whispering gallery mode.
Abstract
This study deals with a design, fabrication and characterization of compact optoelectronic oscillators (OEO). Resonator behaves as a sphere because energy is trapped in whispering-gallery-modes in the equatorial region. For this purpose, Fused-silica and MgF2 are suitable, due to their mechanical characteristics and their low attenuation at 1.55 μm wavelength. In fact, 6-7 degrees Mohs hardness of these materials allows us to obtain a quite easy precision-processing. Our prototype owns a quality factor of approximately 3×108, which is certainly limited by the available technology. Resonator is coupled to an optical fiber including a taper-waveguide-based on a nm-position resolution. Microwave carrier is generated by locking optical phase modulation to a free-spectral-range (FSR) resonator, which occurs in the X-band. Moreover, this carrier is detected by a standard low-noise InGaAs p-i-n telecom photodiode. Oscillator prototype is assembled on a 0.12 m2 optical breadboard. In principle, this surface can be reduced to those of the oscillator main parts (resonator, laser, photodiode, amplifier and optical modulator). Oscillator phase noise measured by a dual-delay-line instrument, which has been developed in Besançon, corresponds to -90 dBrad2/Hz at 10 kHz off carrier. According to this result, oscillator suffers from severe noise-limitations due to several reasons: the thermal coefficient of the resonator, the low power that the resonator can accept, and the small volume of the energy-confinement region in the resonator (≃2×1014 m3) but our oscillator is packaged in a small volume, contrarily to classic OEO based on an optical fiber of a few km.
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Pascal:11-0007528Le document en format XML
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<author><name sortKey="Larger, L" uniqKey="Larger L">L. Larger</name>
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<term>Delay lines</term>
<term>Gallium Arsenides</term>
<term>Indium Arsenides</term>
<term>Magnesium Fluorides</term>
<term>Micro-optics</term>
<term>Microwave radiation</term>
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<term>Optical fibers</term>
<term>Optical modulation</term>
<term>Optical modulators</term>
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<term>Photodiodes</term>
<term>Ternary compounds</term>
<term>Whispering gallery mode</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Mode galerie</term>
<term>Modulation optique</term>
<term>Modulation phase</term>
<term>Bruit phase</term>
<term>Résonateur cavité</term>
<term>Guide onde optique</term>
<term>Photodiode</term>
<term>Amplificateur optique</term>
<term>Modulateur optique</term>
<term>Ligne retard</term>
<term>Hyperfréquence</term>
<term>Fibre optique</term>
<term>Magnésium Fluorure</term>
<term>Composé ternaire</term>
<term>Gallium Arséniure</term>
<term>Indium Arséniure</term>
<term>Microoptique</term>
<term>Silice fusionnée</term>
<term>F Mg</term>
<term>As Ga In</term>
<term>MgF2</term>
<term>InGaAs</term>
<term>0130C</term>
<term>4279G</term>
<term>4260D</term>
<term>4279H</term>
<term>4279</term>
<term>Oscillateur optique</term>
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<front><div type="abstract" xml:lang="en">This study deals with a design, fabrication and characterization of compact optoelectronic oscillators (OEO). Resonator behaves as a sphere because energy is trapped in whispering-gallery-modes in the equatorial region. For this purpose, Fused-silica and MgF<sub>2</sub>
are suitable, due to their mechanical characteristics and their low attenuation at 1.55 μm wavelength. In fact, 6-7 degrees Mohs hardness of these materials allows us to obtain a quite easy precision-processing. Our prototype owns a quality factor of approximately 3×10<sup>8</sup>
, which is certainly limited by the available technology. Resonator is coupled to an optical fiber including a taper-waveguide-based on a nm-position resolution. Microwave carrier is generated by locking optical phase modulation to a free-spectral-range (FSR) resonator, which occurs in the X-band. Moreover, this carrier is detected by a standard low-noise InGaAs p-i-n telecom photodiode. Oscillator prototype is assembled on a 0.12 m<sup>2</sup>
optical breadboard. In principle, this surface can be reduced to those of the oscillator main parts (resonator, laser, photodiode, amplifier and optical modulator). Oscillator phase noise measured by a dual-delay-line instrument, which has been developed in Besançon, corresponds to -90 dBrad<sup>2</sup>
/Hz at 10 kHz off carrier. According to this result, oscillator suffers from severe noise-limitations due to several reasons: the thermal coefficient of the resonator, the low power that the resonator can accept, and the small volume of the energy-confinement region in the resonator (≃2×10<sup>14</sup>
m<sup>3</sup>
) but our oscillator is packaged in a small volume, contrarily to classic OEO based on an optical fiber of a few km.</div>
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<fC01 i1="01" l="ENG"><s0>This study deals with a design, fabrication and characterization of compact optoelectronic oscillators (OEO). Resonator behaves as a sphere because energy is trapped in whispering-gallery-modes in the equatorial region. For this purpose, Fused-silica and MgF<sub>2</sub>
are suitable, due to their mechanical characteristics and their low attenuation at 1.55 μm wavelength. In fact, 6-7 degrees Mohs hardness of these materials allows us to obtain a quite easy precision-processing. Our prototype owns a quality factor of approximately 3×10<sup>8</sup>
, which is certainly limited by the available technology. Resonator is coupled to an optical fiber including a taper-waveguide-based on a nm-position resolution. Microwave carrier is generated by locking optical phase modulation to a free-spectral-range (FSR) resonator, which occurs in the X-band. Moreover, this carrier is detected by a standard low-noise InGaAs p-i-n telecom photodiode. Oscillator prototype is assembled on a 0.12 m<sup>2</sup>
optical breadboard. In principle, this surface can be reduced to those of the oscillator main parts (resonator, laser, photodiode, amplifier and optical modulator). Oscillator phase noise measured by a dual-delay-line instrument, which has been developed in Besançon, corresponds to -90 dBrad<sup>2</sup>
/Hz at 10 kHz off carrier. According to this result, oscillator suffers from severe noise-limitations due to several reasons: the thermal coefficient of the resonator, the low power that the resonator can accept, and the small volume of the energy-confinement region in the resonator (≃2×10<sup>14</sup>
m<sup>3</sup>
) but our oscillator is packaged in a small volume, contrarily to classic OEO based on an optical fiber of a few km.</s0>
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<fC02 i1="01" i2="3"><s0>001B40B83</s0>
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<fC02 i1="04" i2="3"><s0>001B40B60D</s0>
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<s5>03</s5>
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<s5>03</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>06</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Phase noise</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Résonateur cavité</s0>
<s5>11</s5>
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<s5>11</s5>
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<s5>13</s5>
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<s5>14</s5>
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<s5>15</s5>
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<s5>15</s5>
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<s5>16</s5>
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<s5>16</s5>
</fC03>
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<s5>37</s5>
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<s5>37</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Fibre optique</s0>
<s5>47</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Optical fibers</s0>
<s5>47</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Magnésium Fluorure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>50</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Magnesium Fluorides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>50</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>51</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>51</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Gallium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>52</s5>
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<fC03 i1="15" i2="3" l="ENG"><s0>Gallium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>52</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Indium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>53</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Indium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>53</s5>
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<s5>61</s5>
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<s5>61</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Silice fusionnée</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>F Mg</s0>
<s4>INC</s4>
<s5>75</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>As Ga In</s0>
<s4>INC</s4>
<s5>76</s5>
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<fC03 i1="21" i2="3" l="FRE"><s0>MgF2</s0>
<s4>INC</s4>
<s5>83</s5>
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<fC03 i1="22" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>0130C</s0>
<s4>INC</s4>
<s5>85</s5>
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<fC03 i1="24" i2="3" l="FRE"><s0>4279G</s0>
<s4>INC</s4>
<s5>91</s5>
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<s4>INC</s4>
<s5>92</s5>
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<fC03 i1="26" i2="3" l="FRE"><s0>4279H</s0>
<s4>INC</s4>
<s5>93</s5>
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<fC03 i1="27" i2="3" l="FRE"><s0>4279</s0>
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<s5>94</s5>
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<fC03 i1="28" i2="3" l="FRE"><s0>Oscillateur optique</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="28" i2="3" l="ENG"><s0>Optical oscillators</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fN21><s1>003</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>Micro-optics</s1>
<s3>Brussels BEL</s3>
<s4>2010</s4>
</fA30>
</pR>
</standard>
</inist>
</record>
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